With the trend from Si IGBT to SiC MOSFET in electric vehicle (EV) power electronics, the junction temperature is expected to increase from 150°C to 175°C with the potential to exceed 200°C. This ...

BOSTON, June 5, 2024 /PRNewswire/ -- Thermal management for EV power electronics has long posed significant challenges. The ongoing shift from Si IGBT and SiC MOSFET to potentially GaN HEMT in the ...

Thermal management for EV power electronics has long posed significant challenges. The ongoing shift from Si IGBT and SiC MOSFET to potentially GaN HEMT in the future results in higher junction ...

Indium Corporation is proud to announce its participation in the upcoming International Electronics Manufacturing Technology Conference (IEMT), taking place October 16-18 in Penang, Malaysia. Five ...

Cu sintering is proposed as an alternative approach to address the cost factor. Compared to Ag sintering, Cu sintering aims to offer similar performance at a lower cost. A supplier informed IDTechEx ...