The double-gate (DG) FET provides a fundamental advantage over conventional single-gate (SG) FETs. In short-channel FETs the drain potential competes with that of the gate to influence the channel.

At the December 2021 IEDM conference (a conference for people who design advanced semiconductors), IBM announced it was turning transistors on their heads to keep Moore’s Law scaling alive. The new ...

Finfet technology, with its 3D structure, is seen as the key semiconductor technology for the next generation of deep sub-micron chip design. Leah Schuth describes how physical IP developers will rise ...

Purdue University researchers are making progress in developing a new type of transistor that uses a finlike structure instead of the conventional flat design, possibly enabling engineers to create ...

The industry’s quest to continue on the semiconductor roadmap defined by Moore’s Law has led to the adoption of a new transistor structure. Whether you call them finFETs, tri-gate or 3D transistors, ...

The semiconductor industry faces a major change in the way that ICs are made in order to keep improving performance and density, a change that has potential ramifications for design methodologies.

When making the transition from planar devices to FinFETs, IP design challenges arise that require education and experience when dealing with the complexities. Since the inception of the ...

The shift from planar transistors to finFETs is a major inflection point in the IC industry. FinFETs are expected to enable higher performance chips at lower voltages. And the next-generation ...

This future chip manufacturing technology looks evolutionary rather than revolutionary. The company's next generation technology, known as 10-nanometer, is expected to go into production during the ...

And that's good news for AMD folks. Samsung announced that it has begun mass production of advanced logic chips utilizing its 14 nm LPP (Low-Power Plus) process, the 2nd generation of the company's 14 ...

Purdue University researchers are making progress in developing a new type of transistor that uses a finlike structure instead of the conventional flat design, possibly enabling engineers to create ...