KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has expanded its line-up of N-channel power MOSFETs fabricated with the latest-generation process [1], ...
TOKYO--(BUSINESS WIRE)-- Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it has developed a new structure for a silicon carbide metal-oxide-semiconductor field-effect transistor ...
The RAA207700GBM/7701GBM/7702GBM is a synchronous buck regulator with internal power MOSFETs featuring wide input voltage range and constant-on-time control. It has a ...
Compared to traditional silicon, power MOSFETs based on silicon carbide (SiC) can handle higher voltages with lower on-resistance (R DS(on)) and superior thermal conductivity, opening the door to ...
iDEAL Semiconductor is now sampling the first products in its new series of silicon MOSFETs that leverage its SuperQ architecture to deliver efficiencies and performance that rival some compound ...
Suppliers of power semiconductors continue to develop and ship devices based on traditional silicon technology, but silicon is nearing its limits and faces increased competition from technologies like ...
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